Donor type semiconductor at low temperature as maser active medium

Yuri Kornyushin

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arXiv · 0704.1629

Donor type semiconductor at low temperature as maser active medium

Yuri Kornyushin

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Abstract

In some semiconductors donor impurity atoms can attract additional electrons, forming negative donor impurity ions. Thus we have 3 energy levels for electrons: zero energy levels at the bottom of the conductivity band, negative energy levels of the bounded electrons of the negative donor impurity ions, and deeper negative energy levels of the outer electrons of the neutral donor impurity atoms. So the donor impurity atoms could serve as active centres for a maser. The maximum achievable relative population is 0.5. Typical wavelength of the generated oscillation is 0.14 mm; three level scheme could be realized at rather low temperatures, considerably lower than 6 K.

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Yuri Kornyushin. 2007-04-12. Donor type semiconductor at low temperature as maser active medium. https://arxiv.org/abs/0704.1629

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