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arXiv · 0704.2325

Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals

O. A. Matveev·A. I. Terent'ev
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Abstract

The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal and vapors of volatile components, and a low-temperature stage, with charged defects interacting to form neutral associations. The chlorine concentrations necessary to obtain semi-insulating crystals were determined for various ingot cooling rates in the high temperature stage. The dependence of the chlorine concentration [Cl+Te] in the ingot on the temperature of annealing in the high-temperature stage was found. The carrier lifetimes and drift mobilities were obtained in relation to the temperature and cadmium vapor pressure in the postgrowth annealing of the ingot.

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O. A. Matveev, A. I. Terent'ev. 2007-04-18. Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals. https://doi.org/10.1134/1.1325420

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