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arXiv · 0705.0015

The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanoresonators

M. Chu·R. E. Rudd·M. P. Blencowe
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Abstract

Dissipation in the flexural dynamics of doubly clamped nanomechanical bar resonators is investigated using molecular dynamics simulation. The dependence of the quality factor Q on temperature and the size of the resonator is calculated from direct simulation of the oscillation of a series of Si <001> bars with bare {100} dimerized surfaces. The bar widths range from 3.3 to 8.7nm, all with a fixed length of 22nm. The fundamental mode frequencies range from 40 to 90GHz and Q from 10^2 near 1000K to 10^4 near 50K. The quality factor is shown to be limited by defects in the reconstructed surface.

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M. Chu, R. E. Rudd, M. P. Blencowe. 2007-04-30. The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanoresonators. https://arxiv.org/abs/0705.0015

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