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arXiv · 0706.2190

Bipolar spintronics: From spin injection to spin-controlled logic

Igor Zutic·Jaroslav Fabian·Steven C. Erwin
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Abstract

An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization.

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Igor Zutic, Jaroslav Fabian, Steven C. Erwin. 2007-06-14. Bipolar spintronics: From spin injection to spin-controlled logic. https://doi.org/10.1088/0953-8984%2F19%2F16%2F165219

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