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arXiv · 0706.3673

Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots

T. Berstermann·T. Auer·H. Kurtze·M. Schwab·D. R. Yakovlev·M. Bayer·J. Wiersig·C. Gies·F. Jahnke·D. Reuter·A. D. Wieck
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Abstract

The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown to follow in general a non-exponential decay. Only for specific conditions in regard to optical excitation and carrier population, for example, the decay can be well described by a mono-exponential form. For resonant excitation of the ground state transition a strong shortening of the luminescence decay time is observed as compared to the non-resonant case. The results are consistent with a microscopic theory that accounts for deviations from a simple two-level picture.

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T. Berstermann, T. Auer, H. Kurtze, M. Schwab, D. R. Yakovlev, M. Bayer, J. Wiersig, C. Gies, F. Jahnke, D. Reuter, A. D. Wieck. 2007-06-25. Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots. https://doi.org/10.1103/physrevb.76.165318

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