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arXiv · 0707.0398

Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure

L. K. Castelano·G. -Q. Hai·M. -T. Lee
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Abstract

We have developed a theoretical method to study scattering processes of an incident electron through an N-electron quantum dot (QD) embedded in a two-dimensional (2D) semiconductor. The generalized Lippmann-Schwinger equations including the electron-electron exchange interaction in this system are solved for the continuum electron by using the method of continued fractions (MCF) combined with 2D partial-wave expansion technique. The method is applied to a one-electron QD case. Cross-sections are obtained for both the singlet and triplet couplings between the incident electron and the QD electron during the scattering. The total elastic cross-sections as well as the spin-flip scattering cross-sections resulting from the exchange potential are presented. Furthermore, inelastic scattering processes are also studied using a multichannel formalism of the MCF.

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L. K. Castelano, G. -Q. Hai, M. -T. Lee. 2007-11-19. Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure. https://doi.org/10.1103/physrevb.76.165306

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