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arXiv · 0707.0563

Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

M. Janousch·G. I. Meijer·U. Staub·B. Delley·S. F. Karg·B. P. Andreasson
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Abstract

Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.

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M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, B. P. Andreasson. 2007-07-04. Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory. https://arxiv.org/abs/0707.0563

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