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arXiv · 0707.1213

High-temperature PbTe diodes

Z. Dashevsky·V. Kasiyan·E. Mogilko·A. Butenko·R. Kahatabi·S. Genikov·V. Sandomirsky·Y. Schlesinger
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Abstract

We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance x area product, the R0C time constant and the detectivity D* are presented.

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Z. Dashevsky, V. Kasiyan, E. Mogilko, A. Butenko, R. Kahatabi, S. Genikov, V. Sandomirsky, Y. Schlesinger. 2007-07-09. High-temperature PbTe diodes. https://doi.org/10.1016/j.tsf.2007.12.058

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