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arXiv · 0707.4475

Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime

Yu. V. Pershin·M. Di Ventra
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Abstract

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.

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Yu. V. Pershin, M. Di Ventra. 2007-07-30. Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime. https://doi.org/10.1103/physrevb.77.073301

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