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arXiv · 0708.3617

Spin relaxation in the impurity band of a semiconductor in the external magnetic field

Ilya Lyubinskiy
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Abstract

Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted transitions between Zeeman sublevels of the ground state of an isolated impurity, while other mechanisms can be described in terms of spin precession in a random magnetic field during the electron motion over the impurity band. In the later case there are two contributions to the spin relaxation: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to the electron motion on a large scale. The average spin relaxation rate is calculated.

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Ilya Lyubinskiy. 2007-08-27. Spin relaxation in the impurity band of a semiconductor in the external magnetic field. https://doi.org/10.1134/s0021364008240089

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