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arXiv · 0709.2059

Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors

L. Shen·R. Q. Wu·H. Pan·G. W. Peng·M. Yang·Z. D. Sha·Y. P. Feng
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Abstract

II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to enhance the ferromagnetic coupling and to increase the solubility and activity.

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L. Shen, R. Q. Wu, H. Pan, G. W. Peng, M. Yang, Z. D. Sha, Y. P. Feng. 2007-09-13. Ferromagnetism in 2p Light Element-Doped II-oxide and III-nitride Semiconductors. https://doi.org/10.1103/physrevb.78.073306

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