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arXiv · 0709.2575

Realization of a semiconductor-based cavity soliton laser

Y. Tanguy·T. Ackemann·W. J. Firth·R. Jaeger
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Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase-insensitive and hence expected to be robust for all-optical processing applications. The motility of these structures is also demonstrated.

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Y. Tanguy, T. Ackemann, W. J. Firth, R. Jaeger. 2007-09-17. Realization of a semiconductor-based cavity soliton laser. https://doi.org/10.1103/physrevlett.100.013907

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