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arXiv · 0709.3556

Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Casey W. Miller·Zhi-Pan Li·Ivan K. Schuller·R. W. Dave·J. M. Slaughter·Johan Akerman
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Abstract

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schroedinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.

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Casey W. Miller, Zhi-Pan Li, Ivan K. Schuller, R. W. Dave, J. M. Slaughter, Johan Akerman. 2007-09-22. Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions. https://doi.org/10.1103/physrevlett.99.047206

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