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arXiv · 0710.3005

X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators

T. Sasaki·H. Oizumi·N. Yoneyama·N. Kobayashi·N. Toyota
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Abstract

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $κ$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $κ$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.

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T. Sasaki, H. Oizumi, N. Yoneyama, N. Kobayashi, N. Toyota. 2007-10-16. X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators. https://doi.org/10.1143/jpsj.76.123701

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