Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators

Kenji Yonemitsu

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arXiv · 0710.3533

Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators

Kenji Yonemitsu

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Abstract

The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.

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Kenji Yonemitsu. 2007-10-18. Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators. https://arxiv.org/abs/0710.3533

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