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arXiv · 0710.5164

Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

C. C. Lo·J. Bokor·T. Schenkel·A. M. Tyryshkin·S. A. Lyon
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Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.

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C. C. Lo, J. Bokor, T. Schenkel, A. M. Tyryshkin, S. A. Lyon. 2007-11-06. Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors. https://doi.org/10.1063/1.2817966

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