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arXiv · 0710.5304

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

S. V. Morozov·K. S. Novoselov·M. I. Katsnelson·F. Schedin·D. C. Elias·J. A. Jaszczak·A. K. Geim
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Abstract

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.

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S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, A. K. Geim. 2008-01-07. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. https://doi.org/10.1103/physrevlett.100.016602

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