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arXiv · 0711.0754

Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene

E. H. Hwang·S. Das Sarma
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Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature dependent phonon-limited resistivity $ρ_{ph}(T)$ to be linear in temperature for $T\agt 50 K$ with the room temperature intrinsic mobility reaching values above $10^5$ cm$^2/Vs$. We comment on the low-temperature Bloch-Grüneisen behavior where $ρ_{ph}(T) \sim T^4$ for unscreened electron-phonon coupling.

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E. H. Hwang, S. Das Sarma. 2008-01-31. Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene. https://doi.org/10.1103/physrevb.77.115449

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