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arXiv · 0711.0787

Making a field effect transistor on a single graphene nanoribbon by selective doping

Bing Huang·Qimin Yan·Gang Zhou·Jian Wu·Feng Liu·Bing-Lin Gu·Wenhui Duan
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Abstract

Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.

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Bing Huang, Qimin Yan, Gang Zhou, Jian Wu, Feng Liu, Bing-Lin Gu, Wenhui Duan. 2007-12-01. Making a field effect transistor on a single graphene nanoribbon by selective doping. https://doi.org/10.1063/1.2826547

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