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arXiv · 0711.1482

A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio

J. Wan·M. Cahay·S. Bandyopadhyay
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Abstract

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean logic circuits.

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J. Wan, M. Cahay, S. Bandyopadhyay. 2007-11-09. A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio. https://doi.org/10.1016/j.physe.2007.10.119

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