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arXiv · 0712.4298

Quantum Interference Effects in InAs Semiconductor Nanowires

Yong-Joo Doh·Aarnoud L. Roest·Erik P. A. M. Bakkers·Silvano De Franceschi·Leo P. Kouwenhoven
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Abstract

We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to ~ 1.6, which is attributed to a doubling of charge transport via Andreev reflection. At a temperature of 4.2 K, well above the Thouless temperature, conductance fluctuations are almost entirely suppressed, and the nanowire conductance exhibits anomalous quantization in steps of e^{2}/h.

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Yong-Joo Doh, Aarnoud L. Roest, Erik P. A. M. Bakkers, Silvano De Franceschi, Leo P. Kouwenhoven. 2007-12-28. Quantum Interference Effects in InAs Semiconductor Nanowires. https://doi.org/10.3938/jkps.54.135

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