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arXiv · 0801.1354

Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor

Rongwei Hu·K. J. Thomas·Y. Lee·T. Vogt·E. S. Choi·V. F. Mitrovic·R. P. Hermann·F. Grandjean·P. C. Canfield·J. W. Kim·A. I. Goldman·C. Petrovic
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Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb$_{2}$, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.

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Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrovic, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C. Petrovic. 2008-01-09. Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor. https://doi.org/10.1103/physrevb.77.085212

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