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arXiv · 0801.2528

Direct evidence of the self-compression of injected electron-hole plasma in silicon

Pavel Altukhov·Evgenii Kuzminov
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Abstract

A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as a direct evidence of the self-compression of injected electron-hole plasma in silicon. The plasma self-compression explains concentration of injected carriers into one or a few strongly emitting plasma drops.

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Pavel Altukhov, Evgenii Kuzminov. 2008-06-12. Direct evidence of the self-compression of injected electron-hole plasma in silicon. https://doi.org/10.1002/pssb.200743504

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