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arXiv · 0802.0230

Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

D. R. McCamey·G. W. Morley·H. A. Seipel·L. C. Brunel·J. van Tol·C. Boehme
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Abstract

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon dioxide at high magnetic field (B_0 ~ 8.5 T) is presented. Electrically detected magnetic resonance (EDMR) spectra of the hyperfine split 31P donor electron transitions and paramagnetic interface defects were conducted at temperatures in the range 3 K < T < 12 K. The results at these previously unattained (for EDMR) magnetic field strengths reveal the dominance of spin-dependent processes that differ from the previously well investigated recombination between the 31P donor and the P_b state, which dominates at low magnetic fields. While magnetic resonant current responses due to 31P and P_b states are still present, they do not correlate and only the P_b contribution can be associated with an interface process due to spin-dependent tunneling between energetically and physically adjacent P_b states. This work provides an experimental demonstration of spin-dependent tunneling between physically adjacent and identical electronic states as proposed by Kane for readout of donor qubits.

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D. R. McCamey, G. W. Morley, H. A. Seipel, L. C. Brunel, J. van Tol, C. Boehme. 2008-06-05. Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields. https://doi.org/10.1103/physrevb.78.045303

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