Effective capacitance in a single-electron transistor

M. A. Laakso; T. Ojanen; T. T. Heikkila

doi:10.1103/physrevb.77.233303

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arXiv · 0802.1973

Effective capacitance in a single-electron transistor

M. A. Laakso·T. Ojanen·T. T. Heikkila

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Abstract

Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide range of parameters, we discover a finite reactive part even under Coulomb blockade due to virtual processes. At low frequencies this can be described by an effective capacitance. This effect can be probed with microwave reflection measurements in radio-frequency (rf) SET provided that the capacitance of the surroundings does not completely mask that of the SET.

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M. A. Laakso, T. Ojanen, T. T. Heikkila. 2008-03-10. Effective capacitance in a single-electron transistor. https://doi.org/10.1103/physrevb.77.233303

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