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arXiv · 0802.2633

Gold nanoparticle-pentacene memory-transistors

Christophe Novembre·David Guerin·Kamal Lmimouni·Christian Gamrat·Dominique Vuillaume
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Abstract

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticles.

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Christophe Novembre, David Guerin, Kamal Lmimouni, Christian Gamrat, Dominique Vuillaume. 2008-02-19. Gold nanoparticle-pentacene memory-transistors. https://doi.org/10.1063/1.2896602

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