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arXiv · 0802.3756

Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

Kiyohiko Toyama·Takahisa Nishioka·Kentarou Sawano·Yasuhiro Shiraki·Tohru Okamoto
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Abstract

Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

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Kiyohiko Toyama, Takahisa Nishioka, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto. 2008-07-03. Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well. https://doi.org/10.1103/physrevlett.101.016805

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