arXiv · 0803.0124
Perspective of spintronics applications based on the Extraordinary Hall Effect
Abstract
Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.
Explore related subjects
Keep this discovery
A. Gerber, O. Riss. 2008-03-02. Perspective of spintronics applications based on the Extraordinary Hall Effect. https://arxiv.org/abs/0803.0124
Cite the original work for its findings. Save a collection to share your selection of sources.