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arXiv · 0803.0177

Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers

Muhan Choi·Susumu Shinohara·Takahisa Harayama
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Abstract

We study spectral and far-field characteristics of lasing emission from stadium-shaped semiconductor (InGaAsP) microlasers. We demonstrate that the correspondence between a lasing far-field emission pattern and the result of a ray simulation becomes better as the number of lasing modes increases. This phenomenon is reproduced in the wave calculation of the cavity modes.

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Muhan Choi, Susumu Shinohara, Takahisa Harayama. 2008-10-31. Dependence of far-field characteristics on the number of lasing modes in stadium-shaped InGaAsP microlasers. https://doi.org/10.1364/oe.16.017554

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