arXiv · 0803.0708
Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
Abstract
We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.
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Joseph Pingenot, Craig E. Pryor, Michael E. Flatté. 2008-03-05. Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate. https://doi.org/10.1063/1.2937305
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