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arXiv · 0804.2712

Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy

Y. T. Cui·A. Kimura·K. Miyamoto·K. Sakamoto·T. Xie·S. Qiao·M. Nakatake·K. Shimada·M. Taniguchi·S. -i. Fujimori·Y. Saitoh·K. Kobayashi·T. Kanomata·O. Nashima
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Abstract

The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.

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Y. T. Cui, A. Kimura, K. Miyamoto, K. Sakamoto, T. Xie, S. Qiao, M. Nakatake, K. Shimada, M. Taniguchi, S. -i. Fujimori, Y. Saitoh, K. Kobayashi, T. Kanomata, O. Nashima. 2008-04-17. Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy. https://doi.org/10.1002/pssa.200669648

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