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arXiv · 0804.2942

Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays

Hou-Tong Chen·Hong Lu·Abul K. Azad·Richard D. Averitt·Arthur C. Gossard·Stuart A. Trugman·John F. O'Hara·Antoinette J. Taylor
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Abstract

We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges.

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Hou-Tong Chen, Hong Lu, Abul K. Azad, Richard D. Averitt, Arthur C. Gossard, Stuart A. Trugman, John F. O'Hara, Antoinette J. Taylor. 2008-05-12. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays. https://doi.org/10.1364/oe.16.007641

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