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arXiv · 0805.3998

Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

K Y Wang·A C Irvine·J Wunderlich·K W Edmonds·A W Rushforth·R P Campion·C T Foxon·D A Williams·B L Gallagher
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Abstract

We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.

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K Y Wang, A C Irvine, J Wunderlich, K W Edmonds, A W Rushforth, R P Campion, C T Foxon, D A Williams, B L Gallagher. 2008-05-26. Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning. https://arxiv.org/abs/0805.3998

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