A gate-defined silicon quantum dot molecule

H. W. Liu; T. Fujisawa; H. Inokawa; Y. Ono; A. Fujiwara; Y. Hirayama

doi:10.1063/1.2938693

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arXiv · 0806.0422

A gate-defined silicon quantum dot molecule

H. W. Liu·T. Fujisawa·H. Inokawa·Y. Ono·A. Fujiwara·Y. Hirayama

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Abstract

We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.

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H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, Y. Hirayama. 2008-06-03. A gate-defined silicon quantum dot molecule. https://doi.org/10.1063/1.2938693

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