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arXiv · 0806.3431

Long spin coherence in silicon with an electrical spin trap readout

G. W. Morley·D. R. McCamey·H. A. Seipel·L. -C. Brunel·J. van Tol·C. Boehme
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Abstract

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiments.

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G. W. Morley, D. R. McCamey, H. A. Seipel, L. -C. Brunel, J. van Tol, C. Boehme. 2008-09-18. Long spin coherence in silicon with an electrical spin trap readout. https://doi.org/10.1103/physrevlett.101.207602

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