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arXiv · 0806.4138

Investigations of thermometric characteristics of p+-n - type GaP diodes

V. A. Krasnov·Yu. M. Shwarts·M. M. Shwarts·D. P. Kopko·A. M. Fonkich·S. Yu. Yerochin·S. V. Shutov·N. I Sypko
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Abstract

The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown.

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V. A. Krasnov, Yu. M. Shwarts, M. M. Shwarts, D. P. Kopko, A. M. Fonkich, S. Yu. Yerochin, S. V. Shutov, N. I Sypko. 2008-06-25. Investigations of thermometric characteristics of p+-n - type GaP diodes. https://arxiv.org/abs/0806.4138

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