Controlling transistor threshold voltages using molecular dipoles

Smitha Vasudevan; Neeti Kapur; Tao He; Matthew Neurock; James M. Tour; Avik W. Ghosh

doi:10.1063/1.3091290

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arXiv · 0807.3378

Controlling transistor threshold voltages using molecular dipoles

Smitha Vasudevan·Neeti Kapur·Tao He·Matthew Neurock·James M. Tour·Avik W. Ghosh

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Abstract

We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.

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Smitha Vasudevan, Neeti Kapur, Tao He, Matthew Neurock, James M. Tour, Avik W. Ghosh. 2008-07-22. Controlling transistor threshold voltages using molecular dipoles. https://doi.org/10.1063/1.3091290

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