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arXiv · 0807.3460

Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window

Richard Hostein·Adrien Michon·Gregoire Beaudoin·Noelle Gogneau·Gilles Patriache·Jean-Yves Marzin·Isabelle Robert-Philip·Isabelle Sagnes·Alexios Beveratos
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Abstract

The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $μ$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.

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Richard Hostein, Adrien Michon, Gregoire Beaudoin, Noelle Gogneau, Gilles Patriache, Jean-Yves Marzin, Isabelle Robert-Philip, Isabelle Sagnes, Alexios Beveratos. 2008-07-22. Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window. https://doi.org/10.1063/1.2965112

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