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arXiv · 0808.0208

Electric-field control of a hydrogenic donor's spin in a semiconductor

A. De·Craig E. Pryor·Michael E. Flatté
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Abstract

An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.

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A. De, Craig E. Pryor, Michael E. Flatté. 2008-08-02. Electric-field control of a hydrogenic donor's spin in a semiconductor. https://doi.org/10.1103/physrevlett.102.017603

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