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arXiv · 0808.1229

Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy

V. V. Tsybulenko·Ye. A. Baganov·V. A. Krasnov·S. V. Shutov
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Abstract

The possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. By the simulation it was determined, that under steady-state conditions specifying such parameters of the process as the temperature and/or the thickness of the growth space it is possible to obtain graded bandgap layers of the GaAs1-xPx solid solution with increasing of the content of P towards the surface of the layer that possess the composition gradient from 0.5x10-4 mole fraction/nm to 2.0x10-3 mole fraction/nm. It was also shown that control of the composition of ternary solid solutions at liquid phase electroepitaxy can be realized by use of unsteady state electric field.

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V. V. Tsybulenko, Ye. A. Baganov, V. A. Krasnov, S. V. Shutov. 2008-08-14. Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy. https://arxiv.org/abs/0808.1229

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