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arXiv · 0809.1736

Electrical spin injection and detection in lateral all-semiconductor devices

Mariusz Ciorga·Andreas Einwanger·Ursula Wurstbauer·Dieter Schuh·Werner Wegscheider·Dieter Weiss
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Abstract

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%.

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Mariusz Ciorga, Andreas Einwanger, Ursula Wurstbauer, Dieter Schuh, Werner Wegscheider, Dieter Weiss. 2008-09-10. Electrical spin injection and detection in lateral all-semiconductor devices. https://doi.org/10.1103/physrevb.79.165321

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