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arXiv · 0810.5402

Admittance and noise in an electrically driven nano-structure: Interplay between quantum coherence and statistics

Hee Chul Park·Kang-Hun Ahn
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Abstract

We investigate the interplay between the quantum coherence and statistics in electrically driven nano-structures. We obtain expression for the admittance and the current noise for a driven nano-capacitor in terms of the Floquet scattering matrix and derive a non-equilibrium fluctuation-dissipation relation. As an interplay between the quantum phase coherence and the many-body correlation, the admittance has peak values whenever the noise power shows a step as a function of near-by gate voltage. Our theory is demonstrated by calculating the admittance and noise of driven double quantum dots.

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Hee Chul Park, Kang-Hun Ahn. 2008-10-30. Admittance and noise in an electrically driven nano-structure: Interplay between quantum coherence and statistics. https://doi.org/10.1103/physrevlett.101.116804

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