Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band

N. V. Agrinskaya; V. I. Kozub; D. V. Shamshur; A. Shumilin

doi:10.1016/j.ssc.2008.10.022

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arXiv · 0810.5466

Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band

N. V. Agrinskaya·V. I. Kozub·D. V. Shamshur·A. Shumilin

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Abstract

We observed slow relaxation of magnetoresistance in quantum well structures GaAs-AlGaAs with a selective doping of both wells and barrier regions which allowed partial filling of the upper Hubbard band. Such a behavior is explained as related to magnetic-field driven redistribution of the carriers between sites with different occupation numbers due to spin correlation on the doubly occupied centers. This redistribution, in its turn, leads to slow multi-particle relaxations in the Coulomb glass formed by the charged centers.

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N. V. Agrinskaya, V. I. Kozub, D. V. Shamshur, A. Shumilin. 2008-10-30. Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band. https://doi.org/10.1016/j.ssc.2008.10.022

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