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arXiv · 0811.2968

Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

M. A. Vincenti·A. D Orazio·M. G. Cappeddu·Neset Akozbek·M. J. Bloemer·M. Scalora
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Abstract

We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and super-guiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallo-dielectric photonic band gap structures. The exploita-tion of this basic property in semiconductors raises the possibility of new, yet-untapped ap-plications in the UV and soft x-ray ranges.

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M. A. Vincenti, A. D Orazio, M. G. Cappeddu, Neset Akozbek, M. J. Bloemer, M. Scalora. 2008-11-18. Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies. https://doi.org/10.1063/1.3126712

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