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arXiv · 0811.3575

Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation

J. Farjas·C. Rath·A. Pinyol·P. Roura·E. Bertran
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Abstract

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.

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J. Farjas, C. Rath, A. Pinyol, P. Roura, E. Bertran. 2008-11-21. Si3N4 single-crystal nanowires grown from silicon micro and nanoparticles near the threshold of passive oxidation. https://doi.org/10.1063/1.2130380

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