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arXiv · 0812.4325

Frequency doubling and memory effects in the Spin Hall Effect

Yu. V. Pershin·M. Di Ventra
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Abstract

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.

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Yu. V. Pershin, M. Di Ventra. 2008-12-23. Frequency doubling and memory effects in the Spin Hall Effect. https://doi.org/10.1103/physrevb.79.153307

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