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arXiv · 0901.0274

Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene

Farhan Rana·Paul A. George·Jared H. Strait·Jahan Dawlaty·Shriram Shivaraman·Mvs Chandrashekhar·Michael G. Spencer
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Abstract

Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone center phonons. The calculated recombination times range from less than a picosecond to more than hundreds of picoseconds and are strong functions of temperature and electron and hole densities. The theoretical calculations agree well with experimental measurements of the recombination rates of photoexcited carriers in graphene.

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Farhan Rana, Paul A. George, Jared H. Strait, Jahan Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar, Michael G. Spencer. 2009-01-06. Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene. https://doi.org/10.1103/physrevb.79.115447

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