arXiv · 0901.0363
Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench
Abstract
An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon substrate that acts as a gate. Alternating positive and negative differential resistance regions are generated as a function of the drain source values and can be slightly shifted by the gate voltage. Moreover, the negative differential resistance is retrieved in a large bandwidth, of up to 100 MHz, when the structure is excited with ac signals.
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M. Al Ahmad, D. Dragoman, M. Dragoman, R. Plana, J. -H. Ting, F. -Y. Huang, T. -L. Li. 2009-01-04. Current Oscillations and Negative Resistances in Crossed Carbon Nanotubes Suspended Over a Dielectric Trench. https://arxiv.org/abs/0901.0363
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