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arXiv · 0901.3210

Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer

R. G. Dengel·C. Gould·J. Wenisch·K. Brunner·G. Schmidt·L. W. Molenkamp
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Abstract

We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.

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R. G. Dengel, C. Gould, J. Wenisch, K. Brunner, G. Schmidt, L. W. Molenkamp. 2009-01-21. Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer. https://doi.org/10.1088/1367-2630/10/7/073001

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