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arXiv · 0901.3855

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity

Philip J. Harding·Allard P. Mosk·Alex Hartsuiker·Yoanna-Reine Nowicki-Bringuier·Jean-Michel Gerard·Willem L. Vos
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Abstract

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a change in reflectivity modulation depth. The model predicts an optimal cavity Q for any given induced carrier density, if the modulation depth is to be maximized.

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Philip J. Harding, Allard P. Mosk, Alex Hartsuiker, Yoanna-Reine Nowicki-Bringuier, Jean-Michel Gerard, Willem L. Vos. 2009-10-19. Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity. https://arxiv.org/abs/0901.3855

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